SCQH040N120 Datasheet 1200v N-channel Sic Power MOSFET

Manufacturer: Sunnychip

Overview: SCQH040N120 1200V 40mΩ N-Channel SiC Power MOSFET Apr. 2021.

Datasheet Details

Part number	SCQH040N120
Manufacturer	Sunnychip
File Size	2.21 MB
Description	1200V N-Channel SiC Power MOSFET
Datasheet	SCQH040N120-Sunnychip.pdf

General Description

The SCQH040N120 is a high blocking voltage N-Channel SiC power MOSFET.

This device provide excellent performance for high voltage power supplies or pulse circuits.

Applications • Solar Inverters • High Voltage DC/DC Converters • Motor Drivers • Switch Mode Power Supplies Package Type & Internal Circuit G D S Absolute Maximum Ratings @TC=25 ℃ unless otherwise noted Symbol Parameter VDSS VGSS VGSop ID IDM PD Drain to Source Voltage Gate to Source Voltage Recommended operation Values of Gate −Source Voltage Drain Current Pulsed Drain Current TC=25℃ TC=100℃ (Note1) Maximum Power Dissipation TC=25℃ Derate above 25℃ EAS TJ TSTG Single Pulsed Avalanche Energy Operating Junction Temperature Range Storage Temperature Range (Note 2) Thermal Characteristics Symbol Parameter Rth (J-C) Rth (J-A) Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient Sunnychip Semiconductor Co., Ltd.

Key Features

Typical on-Resistance: RDS (on)=40mΩ(typ. ).
High Blocking Voltage.
100% Avalanche Test.
Good Stability and Uniformity with High EAS.

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