SGA45T60SMD Overview
Description
This Insulated Gate Bipolar Transistor (IGBT) use － advanced Field Stop Trench Technology. It offer lower losses and higher energy efficiency for.
Key Features
- Field Stop Trench Technology
- Typical VCE(sat) = 1.9V @ IC=45A
- Soft Fast Reverse Recovery Diode
- High Speed Switching
- RoHS Compliant
