SGA45T60SMD Overview
This Insulated Gate Bipolar Transistor (IGBT) use － advanced Field Stop Trench Technology. It offer lower losses and higher energy efficiency for application such as Welder, UPS, Solar Inverter and other high Frequency Inverter System. Ratings Symbol VCES VGES Parameter Collector to Emitter Voltage Gate to Emitter Voltage IC Collector Current ICM Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode...
SGA45T60SMD Key Features
- Field Stop Trench Technology
- Typical VCE(sat) = 1.9V @ IC=45A
- Soft Fast Reverse Recovery Diode
- High Speed Switching
- RoHS pliant