SGH80T60SMD Datasheet | Sunnychip

Features - Field Stop Trench Technology, Positive temperature coefficient - VCE(sat)=1.45V@IC=80A - trr=75ns (typ.) - High Speed Switching & Low Power Loss - High Input Impedance Applications - PFC, UPS, Welder, PV Inverter,Solar Inverter Aug. 2022 Description The device is designed by advanced Field Stop Trench technology process. This IGBT offer low VCE(sat), high speed switching performance and excellent quality for application such as PFC,UPS, Welder, PV Inverter, Solar Inverter and other switching applications. Package Type & Internal Circuit TO-247 Absolute Maximum Ratings Symbol VCES VGES Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation TJ TSTG Operating Junction Temperature Range Storage Temperature Range TC=25℃ TC=100℃ TC=100℃ TC=25℃ TC=100℃ Thermal Characteristics Symbol Rth (J-C) (IGBT) Rth (J-C) (Diode) Rth (J-A) Parameter Thermal Resistance, Junction to case for IGBT Thermal Resistance, Junction to case for Diode Thermal Resistance, Junction to Ambient Sunnychip Semiconductor Co., Ltd. 1/5 SGH80T60SMD: Rev. 02 Ratings Unit...