Datasheet4U Logo Datasheet4U.com

SGH80T60SMD - 600V 80A FieldStop Trench IGBT

Datasheet Details

Part number SGH80T60SMD
Manufacturer Sunnychip
File Size 2.51 MB
Description 600V 80A FieldStop Trench IGBT
Datasheet download datasheet SGH80T60SMD Datasheet

General Description

The device is designed by advanced FieldStop Trench technology process.

This IGBT offer low VCE(sat), high speed switching performance and excellent quality for application such as PFC,UPS, Welder, PV Inverter, Solar Inverter and other switching applications.

Package Type & Internal Circuit G C E TO-247 Absolute Maximum Ratings Symbol VCES VGES Parameter Collector to Emitter Voltage Gate to Emitter Voltage IC Collector Current ICM Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current PD Maximum Power Dissipation TJ TSTG Operating Junction Temperature Range Storage Temperature Range TC=25℃ TC=100℃ TC=100℃ TC=25℃ TC=100℃ Thermal Characteristics Symbol Rth (J-C) (IGBT) Rth (J-C) (Diode) Rth (J-A) Parameter Thermal Resistance, Junction to case for IGBT Thermal Resistance, Junction to case for Diode Thermal Resistance, Junction to Ambient Sunnychip Semiconductor Co., Ltd.

Overview

SGH80T60SMD SGH80T60SMD 600V 80A FieldStop Trench IGBT.

Key Features

  • FieldStop Trench Technology, Positive temperature coefficient.
  • VCE(sat)=1.45V@IC=80A.
  • trr=75ns (typ. ).
  • High Speed Switching & Low Power Loss.
  • High Input Impedance.