SGH80T60SMD Overview
The device is designed by advanced FieldStop Trench technology process. This IGBT offer low VCE(sat), high speed switching performance and excellent quality for application such as PFC,UPS, Welder, PV Inverter, Solar Inverter and other switching applications. Package Type & Internal Circuit G C E TO-247 Ratings Symbol VCES VGES Parameter Collector to Emitter Voltage Gate to Emitter Voltage IC Collector Current ICM...
SGH80T60SMD Key Features
- FieldStop Trench Technology, Positive temperature coefficient
- VCE(sat)=1.45V@IC=80A
- trr=75ns (typ.)
- High Speed Switching & Low Power Loss
- High Input Impedance