STC9015 Datasheet | Suntac Electronic

.. PNP Silicon Transistor Low Frequency Amplifier - Collector-Base Voltage : VCBO= -60V - plement to STC9014 - Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1. Emitter 2. Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -60 -50 -5 -150 250 150 -55 ~ 150 Units V V V m A m W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE VCE (sat) VBE (on) f T Cob NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC= -100µA, IE=0 IC= -10m A. IB=0 IE = -10µA. IC=0 VCB= --60V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1m A IC= -100m A, IB= -10m A VCE= -6V, IC= -1m A VCE= -6V, IC= -10m A VCB= -10V, IE = 0, f=1MHz VCE= -6V, IC= -0.3m A f=1MHz, Rs=10kΩ -0.50 50 40 -0.18 -0.62 180 2.8 6.0 20 Min. -60 -50 -5 -100 -100 700 -0.3 -0.80 V V MHz p F d B Typ. Max. Units V V V n A n A h FE Classification Classification h FE A 40 ~ 140 B 120 ~ 240 C 200 ~ 400 D 350 ~ 700 1/2 .. Typical Characteristics -50 -45 VCE = -6V IB = -400µ A IB = -350µ A IB = -300µ A IB = -250µ A IB = -200µ A IB = -150µ A IB = -100µ A IB = -50µ A 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 1 -0.1 -1 -10 -100 IC[m A], COLLECTOR CURRENT -40 -35 -30 -25 -20 -15 -10 -5 0 h FE, DC CURRENT GAIN VCE[V], COLLECTOR-EMITTER VOLTAGE IC[m A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 -100...