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F6N60 Datasheet Irf6n60

Manufacturer: Suntac

Overview: ! GENERAL.

Datasheet Details

Part number F6N60
Manufacturer Suntac
File Size 231.29 KB
Description IRF6N60
Datasheet F6N60-Suntac.pdf

General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes.

The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

Key Features

  • ‹ ‹ ‹ Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature IRF6N60 PIN.

F6N60 Distributor