Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Features
- 650V @TJ = 150°C.
- Typ. RDS(on) = 0.16 .
- Ultra Low Gate Charge (typ. Qg = 70nC).
- 100% avalanche tested
D
GDS
TO-220
GD S
TO-220F
G S
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25C) - Continuous (TC = 100C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy.
SSF20N60S Datasheet
