Supertex Inc TN0110
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.| Part No. | TN0110 |
|---|---|
| Datasheet | TN0110 Download |
| Manufacturer |  Supertex Inc |
| Description | N-Channel Enhancement-Mode Vertical DMOS FETs |
| Buy | Stock & Price |
FEATURES
►► Low threshold - 2.0V max. ►► High input impedance ►► Low input capacitance - 50pF typical ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakageAPPLICATIONS
►► Logic level interfaces – ideal for TTL and CMOS ►► Solid state relays ►► Battery operated systems ►► Photo voltaic drives ►► Analog switches ►► General purpose line drivers ►► Telecom switchesGENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway a
