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TN2435 Datasheet N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer: Supertex Inc

Overview: TN2435 N-Channel Enhancement-Mode Vertical DMOS FET.

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Datasheet Details

Part number TN2435
Manufacturer Supertex Inc
File Size 385.59 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
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General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Key Features

  • Low threshold.
  • High input impedance.
  • Low input capacitance.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.

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