TN2504 Datasheet PDF | Supertex Inc

Supertex Inc TN2504

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefﬁcient inherent in MOS devices.

Part No.	TN2504
Datasheet	TN2504 Download
Manufacturer	Supertex Inc
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
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FEATURES

► Low threshold (1.6V max.) ► High input impedance ► Low input capacitance (125pF max.) ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage

APPLICATIONS

► Logic level interfaces - ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switches

GENERAL DESCRIPTION

Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Option TO-243AA (SOT-89) TN2504 TN2504N8-G -G indicates package is RoHS compliant (‘Green’) BVDSS/BVDGS (V) 40 RDS(ON) (max) (Ω) 1.0 ID(ON) (min) (A) 4.0 VGS(TH) (max)...

TN2504 Datasheets by Manufacturer

1 datasheets

Part Number	Manufacturer
TN2504	Microchip Technology