TN2510
Description
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
Key Features
- Low threshold (2.0V max.)
- High input impedance
- Low input capacitance (125pF max.)
- Fast switching speeds
- Low on-resistance
- Free from secondary breakdown
- Low input and output leakage
- Complementary N- and P-channel devices
