Datasheet4U Logo Datasheet4U.com

TN2510 - N-Channel Enhancement-Mode Vertical DMOS FETs

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Key Features

  • Low threshold (2.0V max. ).
  • High input impedance.
  • Low input capacitance (125pF max. ).
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.
  • Complementary N- and P-channel devices General.

📥 Download Datasheet

Datasheet Details

Part number TN2510
Manufacturer Supertex Inc
File Size 516.73 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet TN2510 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TN2510 N-Channel Enhancement-Mode Vertical DMOS FET Features ► Low threshold (2.0V max.) ► High input impedance ► Low input capacitance (125pF max.) ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage ► Complementary N- and P-channel devices General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.