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TN2540 - N-Channel Enhancement-Mode Vertical DMOS FETs

General Description

Low threshold (2.0V max.) High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications This low threshold, enhance

Key Features

  • General.

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Datasheet Details

Part number TN2540
Manufacturer Supertex Inc
File Size 398.43 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet TN2540 Datasheet

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Other Datasheets by Supertex Inc

Part Number Description
TN2501 N-Channel Enhancement-Mode Vertical DMOS FETs
TN2504 N-Channel Enhancement-Mode Vertical DMOS FETs
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TN2535 N-Channel Enhancement-Mode Vertical DMOS FETs

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Supertex inc. TN2540 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold (2.0V max.) ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage Applications This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.