TN2540 Datasheet | Supertex Inc

Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features General Description - - Low threshold (2.0V max.) - - High input impedance - - Low input capacitance (125pF max.) - - Fast switching speeds - - Low on-resistance - - Free from secondary breakdown - - Low input and output leakage Applications This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS...