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TN5325 Datasheet N-channel Enhancement-mode Vertical Dmos Fets

Manufacturer: Supertex Inc

Overview: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET.

Datasheet Details

Part number TN5325
Manufacturer Supertex Inc
File Size 433.36 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet TN5325_SupertexInc.pdf

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Key Features

  • Low threshold (2.0V max. ).
  • High input impedance and high gain.
  • Free from secondary breakdown.
  • Low CISS and fast switching speeds.

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