TP0604 - P-Channel Enhancement-Mode Vertical DMOS FETs

Supertex Inc

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Key Features

Low threshold (-2.4V max. ).
High input impedance.
Low input capacitance (95pF typical).
Fast switching speeds.
Low on-resistance.
Free from secondary breakdown.
Low input and output leakage.

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TP0604 p-channel enhancement-mode vertical dmos fets by Supertex Inc - Datasheet Preview

Datasheet Details

Part number	TP0604
Manufacturer	Supertex Inc
File Size	345.66 KB
Description	P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet	TP0604 Datasheet

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Other Datasheets by Supertex Inc

Part Number	Description
TP0606	P-Channel Enhancement-Mode Vertical DMOS FETs
TP0610T	P-Channel Enhancement-Mode Vertical DMOS FETs
TP0620	P-Channel Enhancement-Mode Vertical DMOS FETs
TP0702N3	P-Channel Enhancement-Mode Vertical DMOS FETs
TP0702ND	P-Channel Enhancement-Mode Vertical DMOS FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Supertex inc. TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► Low threshold (-2.4V max.) ►► High input impedance ►► Low input capacitance (95pF typical) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage Applications ►► Logic level interfaces - ideal for TTL and CMOS ►► Solid state relays ►► Battery operated systems ►► Photo voltaic drives ►► Analog switches ►► General purpose line drivers ►► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.