Supertex Inc TP2640
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.| Part No. | TP2640 |
|---|---|
| Datasheet | TP2640 Download |
| Manufacturer |  Supertex Inc |
| Description | P-Channel Enhancement-Mode Vertical DMOS FETs |
| Buy | Stock & Price |
FEATURES
GENERAL DESCRIPTION
►► Low threshold (-2.0V max.) ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakageAPPLICATIONS
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. ►► Logic level interfaces - ideal for TTL and CMOS ►► Solid state relays ►► Battery operated systems ►► Photo voltaic drives ►► Analog switches Supertex’s vertical DMOS FE
