Full PDF Text Transcription for TP2640 (Reference)
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TP2640. For precise diagrams, and layout, please refer to the original PDF.
Supertex inc. TP2640 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold (-2.0V max.) ►► High input impedance ►► Low input capacita...
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w threshold (-2.0V max.) ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage Applications This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and t
TP2640 Datasheet
