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TP2640 - P-Channel Enhancement-Mode Vertical DMOS FETs

Datasheet Summary

Description

Low threshold (-2.0V max.) High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications This low threshold, enhancement-mode (n

Features

  • General.

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Datasheet preview – TP2640

Datasheet Details

Part number TP2640
Manufacturer Supertex Inc
File Size 406.35 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet TP2640 Datasheet
Additional preview pages of the TP2640 datasheet.

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Full PDF Text Transcription

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Supertex inc. TP2640 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold (-2.0V max.) ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage Applications This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
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