FEATURES
►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► High input impedance and high gain APPLICATIONS
►► Motor controls ►► Converters ►► Amplifiers ►► Switches ►► Power supply circuits ►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) GENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Part Number Package Option Packing VN0300L-G TO-92 1000/Bag VN0300L-G P002 VN0300L-G P003 VN0300L-G P005 TO-92 2000/Reel VN0300L-G P013 VN0300L-G P014 -G denotes a lead (Pb)-free / RoHS compliant package.
Supertex Inc
