VN10KN3 Datasheet | Supertex Inc

VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard mercial Devices BVDSS / BVDGS 60V RDS(ON) (max) 5.0Ω ID(ON) (min) 0.75A Order Number / Package TO-92 VN10KN3 Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ plementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This bination produces devices with the power handling...