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VN10KN3 - N-Channel Enhancement-Mode Vertical DMOS FETs

Key Features

  • ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabiliti.

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Datasheet Details

Part number VN10KN3
Manufacturer Supertex Inc
File Size 454.61 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VN10KN3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDSS / BVDGS 60V RDS(ON) (max) 5.0Ω ID(ON) (min) 0.75A Order Number / Package TO-92 VN10KN3 Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.