VN1206 Datasheet PDF | Supertex Inc

Supertex Inc VN1206

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.

Part No.	VN1206
Datasheet	VN1206 Download
Manufacturer	Supertex Inc
Description	N-Channel MOSFET
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FEATURES

►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► High input impedance and high gain

APPLICATIONS

►► Motor controls ►► Converters ►► Amplifiers ►► Switches ►► Power supply circuits ►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

GENERAL DESCRIPTION

Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induce