VN1206
Description
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
Key Features
- Free from secondary breakdown *
- Low power drive requirement *
- Ease of paralleling *
- Low CISS and fast switching speeds *
- Excellent thermal stability *
- Integral source-drain diode *
- High input impedance and high gain
