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VN12C
N-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVossl BVDGS
160V 200V
ROS(ON)
(max)
In 1n
Features
o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low Crss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices
JO(ON)
(min)
6.0A 6.0A
Applications
o Motor control o Converters o Amplifiers o Switches o Power supply circuits o Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.