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VN2450 - N-Channel Vertical DMOS FETs

General Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Key Features

  • Free from secondary breakdown.
  • Low input and output leakage.
  • Low CISS and fast switching speeds.
  • High input impedance and high gain.

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Datasheet Details

Part number VN2450
Manufacturer Supertex Inc
File Size 537.38 KB
Description N-Channel Vertical DMOS FETs
Datasheet download datasheet VN2450 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features ► Free from secondary breakdown ► Low input and output leakage ► Low CISS and fast switching speeds ► High input impedance and high gain Applications ► Motor controls ► Converters ► Amplifiers ► Switches ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.