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VP1550 - P-Channel Enhancement-Mode Vertical DMOS FETs

Download the VP1550 datasheet PDF. This datasheet also covers the VP1 variant, as both devices belong to the same p-channel enhancement-mode vertical dmos fets family and are provided as variant models within a single manufacturer datasheet.

Features

  • ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabiliti.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VP1-550.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VP1550
Manufacturer Supertex Inc
File Size 466.47 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VP1550 Datasheet

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Other Datasheets by Supertex Inc

Part Number Description
VP1506 P-Channel Enhancement-Mode Vertical DMOS FETs
VP1509 P-Channel Enhancement-Mode Vertical DMOS FETs
VP1106N1 P-Channel Enhancement-Mode Vertical DMOS Power FETs
VP1106N2 P-Channel Enhancement-Mode Vertical DMOS Power FETs
VP1106N5 P-Channel Enhancement-Mode Vertical DMOS Power FETs

Full PDF Text Transcription

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www.DataSheet4U.com VP1550 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -500V * Die in wafer form. RDS(ON) (max) 125Ω ID(ON) (min) -100mA Order Number / Package Die* VP1550NW Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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