VP3203 Datasheet | Supertex Inc

Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Features General Description - - Free from secondary breakdown - - Low power drive requirement - - Ease of paralleling - - Low CISS and fast switching speeds - - High input impedance and high gain - - Excellent thermal stability - - Integral source-to-drain diode Applications This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic...