VN0109 Datasheet | Supertex Inc

Features - - Free from secondary breakdown - - Low power drive requirement - - Ease of paralleling - - Low CISS and fast switching speeds - - Excellent thermal stability - - Integral source-drain diode - - High input impedance and high gain Applications - - Motor controls - - Converters - - Amplifiers - - Switches - - Power supply circuits - - Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Part Number Package Option VN0109N3-G TO-92 VN0109N3-G P002 VN0109N3-G P003 VN0109N3-G P005 TO-92 VN0109N3-G P013 VN0109N3-G P014 -G denotes a lead (Pb)-free / Ro HS pliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / Ro HS pliant. Packing 1000/Bag 2000/Reel Absolute Maximum Ratings Product Summary BVDSS/BVDGS RDS(ON) (max) 90V 3.0Ω Pin Configuration SOURCE...