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2N7007
N-Channel Enhancement-Mode Vertical DMOS FET
Ordering Information
BVDSS / BVDGS
240V
RDS(ON) (max)
45Ω
ID(ON) (min)
150mA
Order Number / Package TO-92 2N7007
Features
s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices
Applications
s Motor controls s Converters s Amplifiers s Switches s Power supply circuits s Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
2N7007 Datasheet
