FEATURES
► High input impedance ► Low input capacitance ► Fast switching speeds ► Low on resistance ► Free from secondary breakdown ► Low input and output leakage APPLICATIONS
► Normally-on switches ► Solid state relays ► Converters ► Linear amplifiers ► Constant current sources ► Battery operated systems ► Telecom Ordering Information BV /BV DSX DGX 700V R (max) DS(ON) 42Ω GENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. I (min) DSS 500mA Package Options TO-252 (D-PAK) DN2470K4-G ABSOLUTE MAXIMUM RATINGS
Parameter Value Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage BVDSX BV DGX ±20V Operating and storage temperature -55OC to +150OC Soldering temperature* 300OC ABSOLUTE MAXIMUM RATINGS
are those values beyond which damage to the device may occur.
Supertex
