❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage
Advanced DMOS Technology
Not recommended for new designs. Please use DN3535 or DN3545 instead. These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors an.
Full PDF Text Transcription for DN2530 (Reference)
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DN2530. For precise diagrams, and layout, please refer to the original PDF.
DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX 300V * Same as SOT-89. RDS(ON) (max) 12Ω IDSS (min) 200mA Order Number / Package TO-...
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SOT-89. RDS(ON) (max) 12Ω IDSS (min) 200mA Order Number / Package TO-92 DN2530N3 TO-243AA* DN2530N8 Product marking for TO-243AA: DN5T❋ Product shipped on 2000 piece carrier tape reels. Where ❋ = 2-week alpha date code Features ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Advanced DMOS Technology Not recommended for new designs. Please use DN3535 or DN3545 instead. These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process
DN2530 Datasheet
