Supertex DN2624ND
N-Channel Depletion-Mode Vertical DMOS FETs
| Part No. | DN2624ND |
|---|---|
| Datasheet | DN2624ND Download |
| Manufacturer |  Supertex |
| Description | N-Channel Depletion-Mode Vertical DMOS FETs |
| Buy | Stock & Price |
FEATURES
High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakageAPPLICATIONS
Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
