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DN2625 Datasheet PDF

Supertex DN2625

DN2625 is a low threshold depletion-mode (normallyon) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. The DN2625DK6-G contains two MOSFETs in an 8-lead, dual pad DFN package.
Part No. DN2625
Datasheet DN2625 Download
Manufacturer
Supertex
Description N-Channel Depletion-Mode Vertical DMOS FET
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DN2625 datasheet page 1 preview

FEATURES

►► Very low gate threshold voltage ►► Designed to be source-driven ►► Low switching losses ►► Low effective output capacitance ►► Designed for inductive loads ►► Well matched for low second harmonic when driven by Supertex MD2130

APPLICATIONS

►► Medical ultrasound beamforming ►► Ultrasonic array focusing transmitter ►► Piezoelectric transducer waveform drivers ►► High speed arbitrary waveform generator ►► Normally-on switches ►► Solid state relays ►► Constant current sources ►► Power supply circuits

GENERAL DESCRIPTION

The Supertex Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. The DN2625K6-G in the 14-lead QFN package is not recommended for new designs, but may continue to be purchased for existing designs.
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