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DN3145N8-G - N-Channel Depletion-Mode Vertical DMOS FETs

Download the DN3145N8-G datasheet PDF. This datasheet also covers the DN3145 variant, as both devices belong to the same n-channel depletion-mode vertical dmos fets family and are provided as variant models within a single manufacturer datasheet.

General Description

The Supertex DN3145 is a depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Key Features

  • High input impedance.
  • Low input capacitance.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DN3145_Supertex.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DN3145N8-G
Manufacturer Supertex
File Size 283.44 KB
Description N-Channel Depletion-Mode Vertical DMOS FETs
Datasheet download datasheet DN3145N8-G Datasheet

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Other Datasheets by Supertex

Part Number Description
DN3145 N-Channel Depletion-Mode Vertical DMOS FETs
DN3125 N-Channel Depletion-Mode Vertical DMOS FETs
DN3135 N-Channel Depletion-Mode Vertical DMOS FETs
DN3135K1-G N-Channel Depletion-Mode Vertical DMOS FETs
DN3135N8-G N-Channel Depletion-Mode Vertical DMOS FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Supertex inc. N-Channel Depletion-Mode Vertical DMOS FETs DN3145 Features ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage Applications ►► Normally-on switches ►► Solid state relays ►► Converters ►► Constant current sources ►► Power supply circuits ►► Telecom General Description The Supertex DN3145 is a depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.