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LN100 - N-Channel MOSFET

General Description

The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider.

Multiple devices can be used in series for voltages greater than 1200V.

A resistor divider ratio of 1000:1 is provided.

Key Features

  • 1200V breakdown voltage.
  • Low threshold, 1.6V max.
  • High input impedance.
  • Low input capacitance.
  • Integrated high voltage resistor divider.
  • Integrated 1000:1 resistor divider.
  • Compact 3x3 LFGA package.

📥 Download Datasheet

Datasheet Details

Part number LN100
Manufacturer Supertex
File Size 311.08 KB
Description N-Channel MOSFET
Datasheet download datasheet LN100 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Supertex inc. LN100 1200V Cascoded N-Channel MOSFET Features ►► 1200V breakdown voltage ►► Low threshold, 1.6V max. ►► High input impedance ►► Low input capacitance ►► Integrated high voltage resistor divider ►► Integrated 1000:1 resistor divider ►► Compact 3x3 LFGA package Applications ►► High voltage shunt regulator ►► High voltage linear amplifier ►► High voltage digital pulsers ►► High voltage sensing circuit General Description The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. Multiple devices can be used in series for voltages greater than 1200V. A resistor divider ratio of 1000:1 is provided. High value resistors are used to minimize power consumption. The maximum Gate-to-Source threshold voltage is 1.6V.