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R521 - N-Channel MOSFET

Download the R521 datasheet PDF. This datasheet also covers the R520 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-qhannel devices Order Number I Package TO-220 To-92 IRF520 IRF521 IRF522 IRF523 R520 R521 - Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate ma.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (R520-Supertex.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number R521
Manufacturer Supertex
File Size 131.07 KB
Description N-Channel MOSFET
Datasheet download datasheet R521 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
! i u p e r t e x ._n c . " IRF520 IRF521 IRF522 IRF523 R520 R521 N-Channel Enhancement-Mode Vertical DMOS Power FETs Preliminary Ordering Information BVossl BVDGS IOOV 60V 100V 60V RDS(ON) (max) 0.30 0.30 0.40 0.40 ID(ON) (min) 8.0A 8.0A 7.0A 7.0A Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-qhannel devices Order Number I Package TO-220 To-92 IRF520 IRF521 IRF522 IRF523 R520 R521 - Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.