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R531 - N-Channel MOSFET

Datasheet Summary

Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and wit.

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Datasheet Details

Part number R531
Manufacturer Supertex
File Size 118.28 KB
Description N-Channel MOSFET
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    Full PDF Text Transcription

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    (JJ §upertex inc. N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS SOV ROS(ON) (max) O.18!l IO(ON) (min) 12.0A Order Number I Package ITO-39 TO-92 IIRF531 R531 IRF531 R531 Preliminary Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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