TC2320 Datasheet | Supertex

Features ❑ Low threshold ❑ Low on resistance ❑ Independent, electrically isolated N- and P-channels ❑ Low input capacitance ❑ Fast switching speeds ❑ Free from secondary breakdowns ❑ Low input and output leakage Low Threshold DMOS Technology The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This bination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Application ❑ Medical Ultrasound Transmitters ❑ High voltage pulsers ❑ Amplifiers ❑ Buffers ❑ Piezoelectric transducer drivers ❑ General purpose line drivers ❑ Logic level interfaces Package Option S1 1 N-Channel BVDSS BVDGS ±20V -55°C to +150°C 300°C 8 7 6 P-Channel D1 D1 D2 D2 Absolute Maximum Ratings- Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature- - Distance of 1.6mm from case for 10 seconds. G1 S2 G2 2 3 4 SO-8 Package (top view) 09/17/02 Supertex Inc. does not remend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined...