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TD9944 - Dual N-Channel Vertical DMOS FETs

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Key Features

  • Dual N-channel devices.
  • Low threshold.
  • 2.0V max.
  • High input impedance.
  • Low input capacitance.
  • 125pF max.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage General.

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Datasheet Details

Part number TD9944
Manufacturer Supertex
File Size 446.05 KB
Description Dual N-Channel Vertical DMOS FETs
Datasheet download datasheet TD9944 Datasheet

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Full PDF Text Transcription (Reference)

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TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features ► Dual N-channel devices ► Low threshold – 2.0V max. ► High input impedance ► Low input capacitance – 125pF max. ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.