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TP01L - P-Channel Enhancement-Mode Vertical DMOS Power FETs

Key Features

  • D Low threshold D High input impedance D Low input capacitance D Fast switching speeds D Low on resistance D Freedom from secondary breakdown D Low input and output leakage D Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the h.

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Datasheet Details

Part number TP01L
Manufacturer Supertex
File Size 231.25 KB
Description P-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet TP01L Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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o §upertexinc. TP01L P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS -20V -40V ROS(ON) (max) 4.00 4.00 IO(ON) (min) -0.85A -0.85A TO-39 Order Number I Package TO-92 TP0102N2 TP0102N3 TP0104N2 TP0104N3 DICE TP0102ND TP0104ND Features D Low threshold D High input impedance D Low input capacitance D Fast switching speeds D Low on resistance D Freedom from secondary breakdown D Low input and output leakage D Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.