Datasheet4U Logo Datasheet4U.com

VN0610 - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Key Features

  • D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

📥 Download Datasheet

Datasheet Details

Part number VN0610
Manufacturer Supertex
File Size 114.72 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet VN0610 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VN0610L N-Channel Enhancement-Mode MOS Transistors Siliconix
VN0610L N-Channel Enhancement-Mode MOS Transistors Vishay Telefunken
VN0610LL TMOS FET Transistor Motorola
VN0610LL N-Channel Enhancement-Mode MOS Transistors Calogic LLC
VN0610LL N-Channel MOSFET Vishay Siliconix

Other Datasheets by Supertex

Part Number Description
VN0635 (VN0635 / VN0640) N-Channel Enhancement-Mode Vertical DMOS FETs
VN0640 (VN0635 / VN0640) N-Channel Enhancement-Mode Vertical DMOS FETs
VN0645 N-Channel Enhancement-Mode Vertical DMOS FETs
VN0650 N-Channel Enhancement-Mode Vertical DMOS FETs
VN0655 N-Channel Enhancement-Mode Vertical DMOS FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
0J §upertexinc. VN0606 VN0610 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVDGS 60V 60V ROS(ON) (max) 30 50 'O(ON) (min) 1.5A O.75A Order Number I Package TO-92 VN0606L VN0610LL Features D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.