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VN2110 - N-Channel Enhancement-Mode Vertical DMOS FETs

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Key Features

  • Free from secondary breakdown.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • High input impedance and high gain.

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Datasheet Details

Part number VN2110
Manufacturer Supertex
File Size 345.33 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VN2110 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Supertex inc. VN2110 N-Channel Enhancement-Mode Vertical DMOS FET Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►High input impedance and high gain Applications ►►Motor controls ►► Converters ►► Amplifiers ►► Switches ►►Power supply circuits ►►Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.