VP0206N7 Datasheet PDF

FEATURES

o 4 independent channels o 4 electrically isolated die o Commercial and Military versions available o Freedom from secondary breakdown o Low power drive requirement o Low C,SS and fast switching speeds o High input impedance and high gain

APPLICATIONS

o Motor control o Convertors o Amplifiers o Switches o Power supply circuits o Driver (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Thermal Characteristics Package 10 continuous N-Channel & IDA (single die) P-Channel 10 pulsed+ & 10AM+ N-Channel P-Channel Power Dissipation @ Tc = 25°C* BIB (OCIW) Bic(OCIW)
● PulseleS! 300 ~S pulse, 2% duty cycle. t Total for package. Plastic DIP 0.6A 2.SA 3W 83.3 41.6 Ceramic DIP 0.7A 2.SA 4W 62.5 31.2 Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices.