Supertex VP0645
P-Channel Enhancement Mode Vertical DMOS FETs
FEATURES
● Ease of paralleling● Free from secondary breakdown
● Low power drive requirement
● Low CISS and fast switching speeds
● Excellent thermal stability
● Integral Source-Drain diode
● High input impedance and high gain
● Complementary N- and P-channel devices
APPLICATIONS
● Motor controls● Converters
● Amplifiers
● Switches
● Power supply circuits m o .c U 4 t e e h S a t a .D w w w TO-39 TO-92 — TO-220 — 30Ω 30Ω -0.2A -0.2A VP0645N2 — VP0650N3 VP0650N5 RDS(ON) (max) ID(ON) (min) Order Number / Package Die† VP0645ND VP0650ND 7 Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.