VP2206 Datasheet PDF

Supertex VP2206

VP2206 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices.

Part No.	VP2206
Datasheet	VP2206 Download
Manufacturer	Supertex
Description	P-Channel Vertical DMOS FETs
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FEATURES

►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►High input impedance and high gain ►►Excellent thermal stability ►►Integral source-to-drain diode

APPLICATIONS

►►Motor controls ►►Converters, amplifiers, and switches ►►Power supply circuits ►►Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

GENERAL DESCRIPTION

The Supertex Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Part Number Package Option VP2206N2-G TO-39 VP2206N3-G TO-92 Packing 500/Bag 1000/Bag Product Summary BVDSS/BVDGS RDS(ON) (max) -60V 0.9Ω ID(ON) (min) -4.0A VP2...