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VQ1001 - N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array

Key Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thernial stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices.

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Datasheet Details

Part number VQ1001
Manufacturer Supertex
File Size 109.52 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
Datasheet download datasheet VQ1001 Datasheet

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Part Number Description
VQ1000 N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
VQ1004 N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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o §upertexinc. VQ1001 Ordering Information BVoss J BVOGS 30V '14-pin side-brazed ceramic DIP. ROS(ON) (max) 1.00 N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array IOION) (min) 2.0A Order Number JPackage Quad Ceramic DIP' VQ1001P Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thernial stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Applications o Motor control o Convertors o Amplifiers o Switches o Power supply circuits o Driver (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.