SISD0600ED120i20 Datasheet | SwissSEM

DATASHEET SISD0600ED120i20 ED-Type phase leg IGBT module VCE = 1200 V IC = 2 x 600 A  i20 ultra-low loss fine pattern Trench IGBT chipset  Baseplate isolation with efficient Al2O3 ceramic  Cu baseplate for low thermal resistance  Industry standard package Maximum ratings1 PARAMETER Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current Isolation voltage Junction operating temperature Case temperature Storage temperature Mounting torques4 SYMBOL CONDITIONS VCES VGE = 0 V, Tvj = 25 °C TC = 120 °C, Tvj = 175 °C ICM tp = 1 ms VGES Ptot TC = 25 °C, Tvj = 175 °C, per switch IFRM tp = 1 ms IFSM VR = 0 V, Tvj = 150 °C, tp = 10 ms, I2t half-sinewave Visol 1 min, f = 50 Hz Tvj(op) Tstg Base-heatsink, M5 screws Mt1 Main terminals, M6 screws UNIT -20 A2s...