SEN06464H2CG1SA-30WR Overview
Data Sheet Rev.1.0 18.02.2014 512MB DDR2 SDRAM SO-DIMM 200 Pin SO-DIMM SEN06464H2CG1SA-xx[E/W]R Up to PC2-6400 in FBGA Technology RoHS pliant Options: Data Rate / Latency Marking DDR2 667 MT/s CL5 DDR2 800 MT/s CL6 -30 -25 Module Density 512MB with 4 dies and.
SEN06464H2CG1SA-30WR Key Features
- 200-pin 64-bit DDR2 Small Outline, Dual-In-Line Double
- Module organization: single rank 64M x 64
- VDD = 1.8V ±0.1V, VDDQ 1.8V ±0.1V
- 1.8V I/O ( SSTL_18 patible)
- Serial Presence Detect (SPD) EEPROM
- Gold-contact pad
- This module is fully pin and functional patible to the
- The pcb and all ponents are manufactured according
- SDRAM ponent Samsung
- Four bit prefetch architecture