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NS10N65K - Silicon N-Channel Power MOSFET

General Description

avalanche energy.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤0.9Ω).
  • Low Gate Charge (Typical Data: 29nC).
  • Low Reverse transfer capacitances(Typical: 15pF) s.
  • 100% Single Pulse avalanche energy Test e.

📥 Download Datasheet

Datasheet Details

Part number NS10N65K
Manufacturer Synmosaic
File Size 2.81 MB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet NS10N65K Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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sales.Mr.wang13826508770 www.sztssd.com Silicon N-Channel Power MOSFET NS10N65K General Description: NS10N65K , the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the VDSS ID PD(TC=25℃) RDS(ON) 650 V 10 A 50 W 0.75 Ω avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO- 252 , which accords with the RoHS standard. Features:  Fast Switching  Low ON Resistance(Rdson≤0.