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Silicon N-Channel Power MOSFET
NS10N65K
General Description:
NS10N65K , the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the
VDSS ID PD(TC=25℃) RDS(ON)
650
V
10
A
50
W
0.75
Ω
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package form is TO- 252 , which accords with the RoHS
standard.
Features:
Fast Switching
Low ON Resistance(Rdson≤0.