NS10N65K Overview
： NS10N65K , the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the VDSS ID PD(TC=25℃) RDS(ON) 650 V 10 A 50 W 0.75 Ω avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO- 252 , which accords with the...
NS10N65K Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.9Ω)
- Low Gate Charge (Typical Data: 29nC)
- Low Reverse transfer capacitances(Typical: 15pF)
- 100% Single Pulse avalanche energy Test e