SLU5N65SV Datasheet | Synmosaic

Description Features This Power MOSFET is produced using Msemitek‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. - 5A, 650V, RDS(on)Type=2.2Ω@VGS = 10 V - Low gate charge ( typical 13n C) - High ruggedness y - Fast switching l - 100% avalanche tested On - Improved dv/dt capability DUse TO-251 times G S TO-252 Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol Parameter SLU5N65SV SLD5N65SV ng VDSS e ID h IDM s VGSS g EAS n IAR To EAR Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy (Note 1) (Note 2) (Note 1) (Note 1) 5 3 10 ±30 173 4 3.5 dv/dt PD For TJ, TSTG Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering...