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TS08N03N3
Single N-Channel Power MOSFET
VDSS(V) 30
RDS (ON)
9mΩ(Typ)@VGS=10V
11mΩ(Typ)@VGS=4.5V
ID(A)
30
Pin Description
FEATURE:
• The TS08N03N3 is the high cell density trenched
N-ch MOSFETS, which provides excellent RDSON
and efficiency for most of the small power switching
ͨʢʱ´ú and load switch applications. APPLICATIONS:
• Load Switch
PDFN3*3-8L
Ordering and Marking Information
Product ID
Marking
Package
Packaging
TS08N03N3
PDFN3*3-8L
Tape&Reel
Absolute Maximum Ratings
Symbol
VDSS VGSS
ID
TJ
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current(VGS= -4.