TS14V06N3 - Dual N-Channel Power MOSFET

General Description

PDFN3X3-8L Ordering and Marking Information Product ID Marking Package Packaging TS14V06N3 PDFN3X3-8L Tape&Reel Absolute Maximum Ratings Symbol VDSS VGSS ID TJ TSTG IDM PD EAS RθJC RθJA Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4.5V) Tc=25°C Tc=

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TS14V06N3 dual n-channel power mosfet by Synmosaic - Datasheet Preview

Datasheet Details

Part number	TS14V06N3
Manufacturer	Synmosaic
File Size	285.61 KB
Description	Dual N-Channel Power MOSFET
Datasheet	TS14V06N3 Datasheet

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TS14V06N3 Dual N-Channel Power MOSFET VDSS（V） RDS (ON) ID(A) 16mΩ(Typ)@VGS=10V 60 20 19mΩ(Typ)@VGS=4.5V FEATURE: • The GNJ14V06N is the high cell density trenched Dual N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. Applications ● DC-DC Converters ● Power management functions ● Synchronous-rectification applications Pin Description PDFN3X3-8L Ordering and Marking Information Product ID Marking Package Packaging TS14V06N3 PDFN3X3-8L Tape&Reel Absolute Maximum Ratings Symbol VDSS VGSS ID TJ TSTG IDM PD EAS RθJC RθJA Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4.