Datasheet Details
| Part number | TS14V06N3 |
|---|---|
| Manufacturer | Synmosaic |
| File Size | 285.61 KB |
| Description | Dual N-Channel Power MOSFET |
| Datasheet | TS14V06N3-Synmosaic.pdf |
|
|
Overview: TS14V06N3 Dual N-Channel Power MOSFET VDSS（V） RDS (ON) ID(A) 16mΩ(Typ)@VGS=10V 60 20 19mΩ(Typ)@VGS=4.5V FEATURE: • The GNJ14V06N is the high cell density trenched Dual N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
| Part number | TS14V06N3 |
|---|---|
| Manufacturer | Synmosaic |
| File Size | 285.61 KB |
| Description | Dual N-Channel Power MOSFET |
| Datasheet | TS14V06N3-Synmosaic.pdf |
|
|
|
PDFN3X3-8L Ordering and Marking Information Product ID Marking Package Packaging TS14V06N3 PDFN3X3-8L Tape&Reel Absolute Maximum Ratings Symbol VDSS VGSS ID TJ TSTG IDM PD EAS RθJC RθJA Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4.5V) Tc=25°C Tc=70°C Maximum Junction Temperature Storage Temperature Range Pulsed Drain Current Maximum Power Dissipation Tc=25°C TA=25°C Avalanche Energy, Single Pulsed Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Quantity 5000 Rating Units 60 V ±20 V 20 A 14 150 °C -55 to 150 °C 100 A 30 W --- 33.8 mJ 4.1 °C/W --- °C/W 1 TS14V06N3 Dual N-Channel Power MOSFET Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Static Characteristics Conditions Min.
Typ.
Max.
| Part Number | Description |
|---|