TS2301BE - Single P -Channel Power MOSFET

General Description

SOT-23 Ordering and Marking Information Product ID Marking Package Packaging TS2301BE A1SHB SOT23 Tape&Reel Absolute Maximum Ratings Symbol VDSS VGSS ID TJ TSTG IDM PD EAS RθJC RθJA Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4.5V) TA=25°C TA=70°

📥 Download Datasheet

TS2301BE single p -channel power mosfet by Synmosaic - Datasheet Preview

Datasheet Details

Part number	TS2301BE
Manufacturer	Synmosaic
File Size	358.91 KB
Description	Single P -Channel Power MOSFET
Datasheet	TS2301BE Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TS23	MICA CAPACITOR	Suntan
TS20	20-Ch Auto Sensitivity Calibration Capacitive Touch Sensor	ADSemiconductor
TS2007	3W filter-free Class D audio power amplifier	ST Microelectronics
TS2007FC	class-D audio power amplifier	STMicroelectronics
TS200R	FAST SWITCHIING RECTIFIER	TRSYS

Other Datasheets by Synmosaic

Part Number	Description
TS2300E	Single N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TS2301BE Single P -Channel Power MOSFET VDSS（V） RDS (ON) ID(A) 95mΩ(Typ)@VGS=-4.5V -20 -2.8 123mΩ(Typ)@VGS=-2.5V FEATURE: • The TS2301BE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. APPLICATIONS: • Load Switch for Portable Devices • Power Management Pin Description SOT-23 Ordering and Marking Information Product ID Marking Package Packaging TS2301BE A1SHB SOT23 Tape&Reel Absolute Maximum Ratings Symbol VDSS VGSS ID TJ TSTG IDM PD EAS RθJC RθJA Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4.