TS520P10E - Single P-Channel Power MOSFET

General Description

SOT-23 Ordering and Marking Information Product ID Marking Package Packaging TS520P10E SOT-23 Tape&Reel Absolute Maximum Ratings Symbol VDSS VGSS ID TJ TSTG IDM PD EAS RθJC RθJA Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4.5V) TA=25°C TA=70°C Max

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TS520P10E single p-channel power mosfet by Synmosaic - Datasheet Preview

Datasheet Details

Part number	TS520P10E
Manufacturer	Synmosaic
File Size	275.42 KB
Description	Single P-Channel Power MOSFET
Datasheet	TS520P10E Datasheet

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TS520P10E Single P-Channel Power MOSFET VDSS（V） RDS (ON) ID(A) 520mΩ(Typ)@VGS=-10V -100 -1 560mΩ(Typ)@VGS=-4.5V FEATURE: • The TS520P10Eis the high cell density trenched Pch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Pin Description SOT-23 Ordering and Marking Information Product ID Marking Package Packaging TS520P10E SOT-23 Tape&Reel Absolute Maximum Ratings Symbol VDSS VGSS ID TJ TSTG IDM PD EAS RθJC RθJA Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4.