Datasheet Details
| Part number | TS520P10E |
|---|---|
| Manufacturer | Synmosaic |
| File Size | 275.42 KB |
| Description | Single P-Channel Power MOSFET |
| Datasheet | TS520P10E-ETC.pdf |
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Overview: TS520P10E Single P-Channel Power MOSFET VDSS（V） RDS (ON) ID(A) 520mΩ(Typ)@VGS=-10V -100 -1 560mΩ(Typ)@VGS=-4.5V FEATURE: • The TS520P10Eis the high cell density trenched Pch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
| Part number | TS520P10E |
|---|---|
| Manufacturer | Synmosaic |
| File Size | 275.42 KB |
| Description | Single P-Channel Power MOSFET |
| Datasheet | TS520P10E-ETC.pdf |
|
|
|
SOT-23 Ordering and Marking Information Product ID Marking Package Packaging TS520P10E SOT-23 Tape&Reel Absolute Maximum Ratings Symbol VDSS VGSS ID TJ TSTG IDM PD EAS RθJC RθJA Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4.5V) TA=25°C TA=70°C Maximum Junction Temperature Storage Temperature Range Pulsed Drain Current Maximum Power Dissipation TA=25°C TA=70°C Avalanche Energy, Single Pulsed Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Quantity 3000 Rating Units -100 V ±20 V -1 A -0.7 150 °C -55 to 150 °C -1.8 A 1 W --- --- mJ 80 °C/W 125 °C/W 1 TS520P10E Single P-Channel Power MOSFET Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS(th) Gate threshold voltage RDS(ON) Drain-Source On-state Resistance IGSS Gate-source leakage current IDSS Zero gate voltage drain current Dynamic Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance QG Gate Total Charge Qgs Gate-Source charge Qgd Gate-Drain charge td(on) Turn-on delay time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time RG Gate Resistance Diode Characteristics VSD Diode Forward Voltage IS Continuous Source Current trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VGS=0V, ID=250uA VDS=VGS,ID=250uA VGS=-10V , ID=-0.8A VGS=-4.5V , ID=-0.4A VGS=±20V , VDS=0V
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