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TMF3201J - Dual N-Channel Dual-Gate MOSFET

Datasheet Summary

Description

The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction.

It is consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads.

The source and substrate are interconnected.

Features

  • s - Two AGC amplifiers in a single package - Integrated gate protection diodes - High AGC-range, high gain, low noise figure.

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Datasheet Details

Part number TMF3201J
Manufacturer TACHYONICS
File Size 237.00 KB
Description Dual N-Channel Dual-Gate MOSFET
Datasheet download datasheet TMF3201J Datasheet
Additional preview pages of the TMF3201J datasheet.

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Full PDF Text Transcription

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Preliminary Specification Dual N-Channel Dual-Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 microminiature plastic package.
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