DESCRIPTION
The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 microminiature plastic package. TMF3201J SOT363 Unit in mm □ FEATURES
- Two AGC amplifiers in a single package - Integrated gate protection diodes - High AGC-range, high gain, low noise figure □ APPLICATIONS
- Professional communications equipment 1. GATE 1(1) 4. DRAIN (2) 5. SOURCE 6. DRAIN (1) -Two gain controlled input stage for UHF and VHF tuners 2. GATE 2 3. GATE 1(2) □ ABSOLUTE MAXIMUM RATINGS
(Ta = 25 ℃) Parameter Per MOSFET ; unless otherwise specified Drain-Source Voltage Drain Current Gate 1 Current Total Power Dissipation Storage Temperature Operating Junction Temperature VDS ID IG1 P tot Ts tg Tj 10 30 ±10 200 -65 ~ 150 150 V mA mA mW ℃ ℃ Symbol Ratings Unit Caution : Electro Static Discharge sensitive device, observe handling precaution January 2005.
