TMF3201J Overview
The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected.
TMF3201J Key Features
- Two AGC amplifiers in a single package
- Integrated gate protection diodes
- High AGC-range, high gain, low noise figure