TZM5266B Description
Power Dissipation at Ta=25° C Forward Voltage Junction to Ambient Junction Temperature Storage Temperature Range Value 500 1.1 0.3 175 -65 to +175 Unit mW V K/mW °C °C Conditions PD VF RthJA TJ TSTG IF=200mA Note: Valid provided that leads at a distance of 10mm from case are kept at ambient temperature. TAITRON PONENTS INCORPORATED .taitronponents.
TZM5266B Key Features
- Planar Die Construction 500mW Power Dissipation Very Sharp Reverse Characteristic Very High Stability Low Reverse Curren
- TZM5267B